Role of Na in reaction pathways and kinetics of CuInSe2 formation from stacked binary precursors

被引：11

作者：

Kim, Sung Cheol ^{[1
]}

Park, Hyeonwook ^{[1
]}

Lee, Eun-Woo ^{[1
]}

Han, Jae Sung ^{[1
]}

Lee, Sung Ho ^{[2
]}

Jeon, Chan-Wook ^{[1
]}

Jung, Dongwook ^{[3
]}

Jeong, Jinju ^{[3
]}

Kim, Woo Kyoung ^{[1
]}

机构：

[1] Yeungnam Univ, Sch Display & Chem Eng, Gyongsan 712749, South Korea

[2] Nano Pract Applicat Ctr, Nano Fus Res Team, Taegu 704801, South Korea

[3] R&D Business Labs, A Project Team, Anyang 431080, South Korea

来源：

THIN SOLID FILMS | 2011年 / 519卷 / 21期

基金：

新加坡国家研究基金会;

关键词：

CuInSe2; Na effect; Mo:Na; SIMS; X-RAY-DIFFRACTION; CIGS SOLAR-CELLS; THIN-FILMS; CU(IN; GA)SE-2; SODIUM;

D O I：

10.1016/j.tsf.2010.12.222

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Binary stacked In2Se3/CuSe precursors were prepared onto substrates with different types of sodium (Na) sources, i.e., soda-lime glass (SLG), sodium-free glass (SFG), SFG with Na-doped Mo layers (Mo:Na), in a co-evaporation system. SIMS depth profiles for In2Se3 precursors deposited at 400 degrees C demonstrated that the different amounts of Na diffused out of each Na source. High-temperature XRD experiments revealed that there was no significant effect of Na on the reaction path of CuInSe2 formation from In2Se3/CuSe stacked precursor. The reaction rate of the precursor without Na (i.e.. SFG/Mo/In2Se3/CuSe) was found to be higher than that of those with Na (i.e., SLG/Mo/In2Se3/CuSe and SFG/Mo:Na(750 nm)/Mo/In2Se3/CuSe). (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：7250 / 7253

页数：4

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