Characterization of nano-structured TiN thin films prepared by RF magnetron sputtering

被引：36
|
作者：
Kim, TS
Park, SS
Lee, BT
机构：
[1] Korea Inst Ind Technol, Nanomat Team, Inchon 406130, South Korea
[2] Sangju Natl Univ, Dept Mat Sci & Engn, Sangju 742711, Kyungbuk, South Korea
[3] Kongju Natl Univ, Chungnam Res Ctr Nano Mat, Kong Ju 314701, Chungnam, South Korea
[4] Kongju Natl Univ, Sch Adv Mat Engn, Kong Ju 314701, Chungnam, South Korea
来源：
MATERIALS LETTERS | 2005年 / 59卷 / 29-30期
关键词：
TiN thin film; RF sputtering; nanoindentation; nanostructures;
D O I：
10.1016/j.matlet.2005.07.047
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
TiN thin films were deposited on Si substrate using an R.F. sputter as a function of Ar/N-2 ratio of 20:30, 10:30 and 0:30. The average thickness of thin film was 0.7 mu m, while the size of TiN nano-particles dispersed in the matrix was 5 similar to 10 nm in diameter. The microstructure became fine as the flow rate of N-2 to Ar gas increased. The hardness and elastic modulus measured by a nanoindentation method were also enhanced. It discussed the fracture pattern took placed at the TiN layer during the indentation. (C) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：3929 / 3932
页数：4
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