In-assisted desorption of native GaAs surface oxides

被引：12

作者：

Li, L. H. ^{[1
]}

Linfield, E. H. ^{[1
]}

Sharma, R. ^{[1
]}

Davies, A. G. ^{[1
]}

机构：

[1] Univ Leeds, Sch Elect & Elect Engn, Leeds LS2 9JT, W Yorkshire, England

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 06期

基金：

英国工程与自然科学研究理事会;

关键词：

QUANTUM DOTS;

D O I：

10.1063/1.3623424

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate In-assisted desorption of native GaAs surface oxides at substrate temperatures of 480-550 degrees C. The oxides are removed through production of volatile Ga and In suboxides, Ga(2)O, and In(2)O. Compared to a Ga-assisted desorption process, excess In is easily removed at low substrate temperature, favouring a clean, smooth surface. The feasibility of using In-assisted desorption for the regrowth of high quality quantum dot structures is shown. (C) 2011 American Institute of Physics. [doi:10.1063/1.3623424]

引用

页数：3

共 15 条

[1] Desorption process of GaAs surface native oxide controlled by direct Ga-beam irradiation [J].

Asaoka, Y .

JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) :40-45

[2] Gallium-assisted deoxidation of patterned substrates for site-controlled growth of InAs quantum dots [J].

Atkinson, P. ;

Schmidt, O. G. .

JOURNAL OF CRYSTAL GROWTH, 2009, 311 (07) :1815-1818

[3] Formation and ordering of epitaxial quantum dots [J].

Atkinson, Paola ;

Schmidt, Oliver G. ;

Bremner, Stephen P. ;

Ritchie, David A. .

COMPTES RENDUS PHYSIQUE, 2008, 9 (08) :788-803

[4] Temperature dependence of Ga-assisted oxide desorption on GaAs(001) [J].

Bastiman, F. ;

Hogg, R. ;

Skolnick, M. ;

Cullis, A. G. ;

Hopkinson, M. .

16TH INTERNATIONAL CONFERENCE ON MICROSCOPY OF SEMICONDUCTING MATERIALS, 2010, 209

[5] GaAs(001) planarization after conventional oxide removal utilising self-governed InAs QD site selection [J].

Bastiman, F. ;

Cullis, A. G. .

APPLIED SURFACE SCIENCE, 2010, 256 (13) :4269-4271

[6] INVESTIGATION OF THE INTERFACE REGION PRODUCED BY MOLECULAR-BEAM EPITAXIAL REGROWTH [J].

BISWAS, D ;

BERGER, PR ;

DAS, U ;

OH, JE ;

BHATTACHARYA, PK .

JOURNAL OF ELECTRONIC MATERIALS, 1989, 18 (02) :137-142

[7] Substrate temperature measurement using a commercial band-edge detection system [J].

Farrer, I. ;

Harris, J. J. ;

Thomson, R. ;

Barlett, D. ;

Taylor, C. A. ;

Ritchie, D. A. .

JOURNAL OF CRYSTAL GROWTH, 2007, 301 :88-92

[8]

FOXON CT, 1983, J VAC SCI TECHNOL B, V2, P293

[9] Desorption of InAs quantum dots [J].

Heyn, C ;

Hansen, W .

JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) :218-222

[10] Survival of atomic monolayer steps during oxide desorption on GaAs (100) [J].

Lee, J. H. ;

Wang, Zh. M. ;

Salamo, G. J. .

JOURNAL OF APPLIED PHYSICS, 2006, 100 (11)

← 1 2 →