In-assisted desorption of native GaAs surface oxides

被引：12
作者：
Li, L. H. [1 ]
Linfield, E. H. [1 ]
Sharma, R. [1 ]
Davies, A. G. [1 ]
机构：
[1] Univ Leeds, Sch Elect & Elect Engn, Leeds LS2 9JT, W Yorkshire, England
来源：
APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 06期
基金：
英国工程与自然科学研究理事会;
关键词：
QUANTUM DOTS;
D O I：
10.1063/1.3623424
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate In-assisted desorption of native GaAs surface oxides at substrate temperatures of 480-550 degrees C. The oxides are removed through production of volatile Ga and In suboxides, Ga(2)O, and In(2)O. Compared to a Ga-assisted desorption process, excess In is easily removed at low substrate temperature, favouring a clean, smooth surface. The feasibility of using In-assisted desorption for the regrowth of high quality quantum dot structures is shown. (C) 2011 American Institute of Physics. [doi:10.1063/1.3623424]
引用
收藏
页数：3
相关论文
共 15 条
  • [1] Desorption process of GaAs surface native oxide controlled by direct Ga-beam irradiation
    Asaoka, Y
    [J]. JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) : 40 - 45
  • [2] Gallium-assisted deoxidation of patterned substrates for site-controlled growth of InAs quantum dots
    Atkinson, P.
    Schmidt, O. G.
    [J]. JOURNAL OF CRYSTAL GROWTH, 2009, 311 (07) : 1815 - 1818
  • [3] Formation and ordering of epitaxial quantum dots
    Atkinson, Paola
    Schmidt, Oliver G.
    Bremner, Stephen P.
    Ritchie, David A.
    [J]. COMPTES RENDUS PHYSIQUE, 2008, 9 (08) : 788 - 803
  • [4] Temperature dependence of Ga-assisted oxide desorption on GaAs(001)
    Bastiman, F.
    Hogg, R.
    Skolnick, M.
    Cullis, A. G.
    Hopkinson, M.
    [J]. 16TH INTERNATIONAL CONFERENCE ON MICROSCOPY OF SEMICONDUCTING MATERIALS, 2010, 209
  • [5] GaAs(001) planarization after conventional oxide removal utilising self-governed InAs QD site selection
    Bastiman, F.
    Cullis, A. G.
    [J]. APPLIED SURFACE SCIENCE, 2010, 256 (13) : 4269 - 4271
  • [6] INVESTIGATION OF THE INTERFACE REGION PRODUCED BY MOLECULAR-BEAM EPITAXIAL REGROWTH
    BISWAS, D
    BERGER, PR
    DAS, U
    OH, JE
    BHATTACHARYA, PK
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1989, 18 (02) : 137 - 142
  • [7] Substrate temperature measurement using a commercial band-edge detection system
    Farrer, I.
    Harris, J. J.
    Thomson, R.
    Barlett, D.
    Taylor, C. A.
    Ritchie, D. A.
    [J]. JOURNAL OF CRYSTAL GROWTH, 2007, 301 : 88 - 92
  • [8] FOXON CT, 1983, J VAC SCI TECHNOL B, V2, P293
  • [9] Desorption of InAs quantum dots
    Heyn, C
    Hansen, W
    [J]. JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) : 218 - 222
  • [10] Survival of atomic monolayer steps during oxide desorption on GaAs (100)
    Lee, J. H.
    Wang, Zh. M.
    Salamo, G. J.
    [J]. JOURNAL OF APPLIED PHYSICS, 2006, 100 (11)
12