O-band InAs/GaAs quantum dot laser monolithically integrated on exact (001) Si substrate

被引：33

作者：

Li, Keshuang ^{[1
]}

Liu, Zizhuo ^{[1
]}

Tang, Mingchu ^{[1
]}

Liao, Mengya ^{[1
]}

Kim, Dongyoung ^{[1
]}

Deng, Huiwen ^{[1
]}

Sanchez, Ana M. ^{[2
]}

Beanland, R. ^{[2
]}

Martin, Mickael ^{[3
]}

Baron, Thierry ^{[3
]}

Chen, Siming ^{[1
]}

Wu, Jiang ^{[1
]}

Seeds, Alwyn ^{[1
]}

Liu, Huiyun ^{[1
]}

机构：

[1] UCL, Dept Elect & Elect Engn, London WC1E 7JE, England

[2] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

[3] Univ Grenoble Alpes, CNRS, CEA LETI, MINATEC,LTM, F-38054 Grenoble, France

来源：

JOURNAL OF CRYSTAL GROWTH | 2019年 / 511卷

基金：

英国工程与自然科学研究理事会; 欧盟地平线“2020”;

关键词：

Low dimensional structures; Molecular beam epitaxy; Semiconducting III-V materials; Laser Diodes; ARRAY;

D O I：

10.1016/j.jcrysgro.2019.01.016

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The concept of high-efficiency, high-reliability and low-threshold electrically pumped lasers monolithically grown on silicon has attracted great attention over the past several decades, as a promising on-chip optical source for Si photonics. In this paper, we report an electrically pumped continuous-wave (CW) 1.3 mu m InAs/GaAs quantum dot (QD) lasers grown on a complementary metal-oxidesemiconductor (CMOS) compatible Si exact (0 0 1) substrate with reduced GaAs buffer thickness down to similar to 2 mu m. A threshold current density (Jth) as low as similar to 160 A/cm(2) has been achieved at room temperature. The characteristic temperature (T-0) obtained is similar to 60.8 K and laser operation is observed up to 52 degrees C under CW mode. These results suggest that an O-band InAs/GaAs QD laser could be very promising to develop a monolithically integrated on-chip optical source for Si photonics.

引用

页码：56 / 60

页数：5

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