Influence of grain-boundary defects on electric transport in CeRhSn with a non-Fermi-liquid ground state

被引:7
作者
Slebarski, A
Szot, K
Gamza, M
Penkalla, HJ
Breuer, U
机构
[1] Silesian Univ, Inst Phys, PL-40007 Katowice, Poland
[2] Res Ctr Julich, IFF, D-52425 Julich, Germany
[3] Res Ctr Julich, IWV, D-52425 Julich, Germany
[4] Res Ctr Julich, ZCH, D-52425 Julich, Germany
关键词
D O I
10.1103/PhysRevB.72.085443
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Measurements by atomic force microscopy reported for a polycrystalline CeRhSn sample show nanometer-sized grains consisting of crystalline components. The grains are separated by a grain boundary. The high-resolution electron microscopy and secondary-ion mass spectrometry were used to determine homogeneity of the grains and the grain boundary. The grains are homogeneous up to about 60% of the major phase, with slightly off-stoichiometric phases constituting the balance, whereas the volume fractions of intercrystalline components are strongly inhomogeneous and off stoichiometric. We argue that there is possibly a ballistic transport of electrons through an interface between the grains, which strongly modifies the resistivity of the CeRhSn stoichiometric grains, which is non-Fermi-liquid in character.
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页数:6
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