InGaAs/GaAs/AlGaAs Lasers Emitting at a Wavelength of 1190 nm Grown by MOCVD Epitaxy on GaAs Substrate

被引：4

作者：

Vinokurov, D. A. ^{[1
]}

Nikolaev, D. N. ^{[1
]}

Pikhtin, N. A. ^{[1
]}

Stankevich, A. L. ^{[1
]}

Shamakhov, V. V. ^{[1
]}

Rastegaeva, M. G. ^{[1
]}

Rozhkov, A. V. ^{[1
]}

Tarasov, I. S. ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2010年 / 44卷 / 12期

关键词：

QUANTUM-WELL LASERS; SINGLE-MODE LASER; MU-M; ALINGAAS/INP HETEROSTRUCTURES; EFFICIENCY; DOTS;

D O I：

10.1134/S1063782610120109

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

InGaAs/GaAs/AlGaAs laser heterostructures are grown by MOCVD epitaxy on GaAs substrates. Mesastripe laser diodes with an aperture of 100 mu m emitting at a wavelength of 1190 nm are fabricated. It is shown that, in these lasers, the active region is relaxed, which manifests itself in the spread of attainable maximal power for various lasers obtained from the same heterostructure. The maximal emission power in a CW mode of lasing for such lasers was 5.5 W per mirror.

引用

页码：1592 / 1596

页数：5

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