Implementation of Dopant-Free Hafnium Oxide Negative Capacitance Field-Effect Transistor

被引：24

作者：

Cheng, Chun-Hu ^{[1
]}

Fan, Chia-Chi ^{[2
]}

Tu, Chun-Yuan ^{[2
]}

Hsu, Hsiao-Hsuan ^{[3
]}

Chang, Chun-Yen ^{[2
]}

机构：

[1] Natl Taiwan Normal Univ, Dept Mech Engn, Taipei 10610, Taiwan

[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan

[3] Natl Taipei Univ Technol, Dept Mat & Mineral Resources Engn, Taipei 10608, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2019年 / 66卷 / 01期

关键词：

Dopant free; ferroelectric; hafnium oxide; negative capacitance (NC) transistor; orthorhombic; FERROELECTRICITY;

D O I：

10.1109/TED.2018.2881099

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time, we successfully demonstrated the dopant-free HfO2 negative capacitance (NC) transistor featuring a low gate-overdrive voltage and a nearly hysteresis-free sub-40 mV/dec swing. These excellent performances can be ascribed to the reduction of the monoclinic phase suppressed with the thickness scaling and gate stress engineering favorably rearranging oxygen vacancies to boost orthorhombic phase transition. The highly scalable and dopant-free NC transistor shows the potential for the application of advanced CMOS technology.

引用

页码：825 / 828

页数：4