Numerical and Experimental Investigation of Single Event Effects in SOI Lateral Power MOSFETs

被引：37

作者：

Shea, Patrick M. ^{[1
]}

Shen, Z. John ^{[1
]}

机构：

[1] Univ Cent Florida, Dept Elect Engn & Comp Sci, Orlando, FL 32816 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2011年 / 58卷 / 06期

关键词：

Heavy ions; LDMOS; power devices; radiation effects; single event burnout; single event gate rupture; SEGR FAILURE; DAMAGE;

D O I：

10.1109/TNS.2011.2172956

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

150 V SOI lateral power MOSFETs were designed and fabricated with features intended to provide hardness against SEB and SEGR. The response of SOI power MOSFETs to heavy ion radiation was investigated both experimentally and using TCAD simulations. These power MOSFETs demonstrated an electrical performance figure of merit Q(GD) x R-DSON considerably improved over state of the art commercial trench VDMOS and rad-hard planar VDMOS devices, and survived heavy ion irradiation at the full V-DS biasing of 150 V and full V-GS biasing of -16 V simultaneously.

引用

页码：2739 / 2747

页数：9

共 32 条

[21]

Merchant S., 1993, Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs ISPSD '93 (Cat. No.93CH3314-2), P124, DOI 10.1109/ISPSD.1993.297121

[22]

Parthasarathy V, 2002, PROCEEDINGS OF THE 14TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, P265

[23] Analysis of high current breakdown and UIS behavior of Resurf LDMOS (RLDMOS) devices [J].

Pendharkar, S ;

Efland, T ;

Tsai, CY .

ISPSD '98 - PROCEEDINGS OF THE 10TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 1998, :419-422

[24] Current Leakage Evolution in Partially Gate Ruptured Power MOSFETs [J].

Scheick, Leif ;

Edmonds, Larry ;

Selva, Luis ;

Chen, Yuan .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2008, 55 (04) :2366-2375

[25] BUSFET - A radiation-hardened SOI transistor [J].

Schwank, JR ;

Shaneyfelt, MR ;

Draper, BL ;

Dodd, PE .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1999, 46 (06) :1809-1816

[26]

Shea PM, 2011, PROC INT SYMP POWER, P376, DOI 10.1109/ISPSD.2011.5890869

[27] Lateral power MOSFET for megahertz-frequency, high-density DC/DC converters [J].

Shen, ZJ ;

Okada, DN ;

Lin, FY ;

Anderson, S ;

Cheng, X .

IEEE TRANSACTIONS ON POWER ELECTRONICS, 2006, 21 (01) :11-17

[28] Impact of oxide thickness on SEGR failure in vertical PowerMOSFETs; Development of a semi-empirical expression [J].

Titus, JL ;

Wheatley, CF ;

Burton, DI ;

Mouret, I ;

Allenspach, M ;

Brews, J ;

Schrimpf, R ;

Galloway, K ;

Pease, RL .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1995, 42 (06) :1928-1934

[29] Influence of ion beam energy on SEGR failure thresholds of vertical power MOSFETs [J].

Titus, JL ;

Wheatley, CF ;

Allenspach, M ;

Schrimpf, RD ;

Burton, DI ;

Brews, JR ;

Galloway, KF ;

Pease, RL .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1996, 43 (06) :2938-2943

[30]

Xiao ZQ, 2007, INT C COMMUN CIRCUIT, P1265

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