Effects of heat dissipation on unipolar resistance switching in Pt/NiO/Pt capacitors

被引：132
作者：
Chang, S. H. [1 ]
Chae, S. C. [1 ]
Lee, S. B. [1 ]
Liu, C. [1 ]
Noh, T. W. [1 ]
Lee, J. S.
Kahng, B.
Jang, J. H. [4 ]
Kim, M. Y. [4 ]
Kim, D. -W. [2 ,5 ]
Jung, C. U. [3 ]
机构：
[1] Seoul Natl Univ, Dept Phys & Astron, ReCOE & FPRD, Seoul 151747, South Korea
[2] Ewha Womans Univ, Div Nano Sci, Seoul 120750, South Korea
[3] Hankuk Univ Foreign Studies, Dept Phys, Yongin 449791, Gyeonggi, South Korea
[4] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151747, South Korea
[5] Ewha Womans Univ, Dept Phys, Seoul 120750, South Korea
来源：
APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 18期
关键词：
D O I：
10.1063/1.2924304
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We fabricated Pt/NiO/Pt capacitor structures with various bottom electrode thicknesses t(BE) and investigated their resistance switching behaviors. The capacitors with t(BE)>= 50 nm exhibited typical unipolar resistance memory switching, while those with t(BE)<= 30 nm showed threshold switching. This interesting phenomenon can be explained in terms of the temperature-dependent stability of conducting filaments. In particular, the thinner tBE makes dissipation of Joule heat less efficient, so the filaments will be at a higher temperature and become less stable. This study demonstrates the importance of heat dissipation in resistance random access memory. (C) 2008 American Institute Of Physics.
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页数：3
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