Circuit with small-capacitance high-quality Nb Josephson junctions

被引：19
作者：
Watanabe, M
Nakamura, Y
Tsai, JS
机构：
[1] RIKEN, Frontier Res Syst, Wako, Saitama 3510198, Japan
[2] NEC Fundamental Res Labs, Tsukuba, Ibaraki 3058501, Japan
来源：
APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 03期
关键词：
D O I：
10.1063/1.1640798
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have developed a fabrication process for nanoscale tunnel junctions which includes focused-ion-beam etching from different directions. By applying the process to a Nb/(Al-)Al2O3/Nb trilayer, we have fabricated a Nb single-electron transistor (SET), and characterized the SET at low temperatures, T=0.04-40 K. The superconducting gap energy and the transition temperature of the Nb SET agree with the bulk values, which suggests high quality Nb junctions. The single-electron charging energy of the SET is estimated to be larger than 1 K. (C) 2004 American Institute of Physics.
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页码：410 / 412
页数：3
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