Nonvolatile memory with molecule-engineered tunneling barriers

被引：11

作者：

Hou, Tuo-Hung ^{[1
]}

Raza, Hassan ^{[1
]}

Afshari, Kamran ^{[1
]}

Ruebusch, Daniel J. ^{[1
]}

Kan, Edwin C. ^{[1
]}

机构：

[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 15期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2911741

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a novel field-sensitive tunneling barrier by embedding C-60 in SiO2 for nonvolatile memory applications. C-60 is a better choice than ultrasmall nanocrystals due to its monodispersion. Moreover, C-60 provides accessible energy levels to prompt resonant tunneling through SiO2 at high fields. However, this process is quenched at low fields due to highest occupied molecular orbital (HOMO)-lowest unoccupied molecular orbital (LUMO) gap and large charging energy of C-60. Furthermore, we demonstrate an improvement of more than an order of magnitude in retention to program/erase time ratio for a metal nanocrystal memory. This shows promise of engineering tunnel dielectrics by integrating molecules in the future hybrid molecular-silicon electronics. (C) 2008 American Institute of Physics.

引用

页数：3

共 19 条

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