Raman study of self-assembled SiGe nanoislands grown at low temperatures

被引：23
|
作者：
Valakh, MY
Yukhymchuk, V
Dzhagan, VM
Lytvyn, OS
Milekhin, AG
Nikiforov, AI
Pchelyakov, OP
Alsina, F
Pascual, J
机构：
[1] NAS Ukraine, Lashkaryovs Inst Semicond Phys, UA-03028 Kiev, Ukraine
[2] Inst Semicond Phys, Novosibirsk 630090, Russia
[3] Univ Autonoma Barcelona, Dept Fis, Bellaterra 08193, Spain
来源：
NANOTECHNOLOGY | 2005年 / 16卷 / 09期
关键词：
D O I：
10.1088/0957-4484/16/9/007
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report on Raman scattering measurements on Si-capped Ge quantum structures grown by molecular beam epitaxy on Si(001) at low temperatures. We find a double band structure in the Ge-Ge frequency range for nanoislands grown at substrate temperatures ranging in the interval 300-500 degrees C. Complementary information has been obtained from performing Raman scattering experiments on annealed samples. The results are interpreted in terms of a model that considers quantum structures (hut clusters) composed of a strained Ge core and a more relaxed SiGe shell.
引用
收藏
页码：1464 / 1468
页数：5
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