Hopping conduction and magnetoresistance of a GaAs/AlxGa1-xAs quantum well with embedded InAs dots

被引：6
作者：
Li, L. [1 ,2 ]
Kim, Gil-Ho [1 ,2 ]
Thomas, K. J. [1 ,2 ]
Ritchie, D. A. [3 ]
机构：
[1] Sungkyunkwan Univ, Dept Elect & Elect Engn, Suwon 440746, South Korea
[2] Sungkyunkwan Univ, Adv Inst Nanotechnol, Suwon 440746, South Korea
[3] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
来源：
PHYSICAL REVIEW B | 2011年 / 83卷 / 15期
关键词：
NEGATIVE MAGNETORESISTANCE; FIELD;
D O I：
10.1103/PhysRevB.83.153304
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Magnetoresistance and temperature-dependent conductance are measured in the sample made of a GaAs/AlxGa1-xAs quantum well with self-assembled InAs dots. Conductance is analyzed by Mott's hopping theory; the localization lengths have been extracted at various gate voltages. The sample is in the transition from near to metal-insulator to the deeply hopping regime with the combined effect of the long-and short-range scattering potentials. The magnitude of the negative magnetoresistance increases with increasing negative gate voltage. The magnetic-field dependence of the resistance can be explained by the theory of the interference model of hopping electrons.
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页数：3
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