Fabrication of Al-Doped ZnO Film with High Conductivity Induced by Photocatalytic Activity

被引：9

作者：

Hong, Jeongsoo ^{[1
]}

Katsumata, Ken-Ichi ^{[1
]}

Matsushita, Nobuhiro ^{[2
]}

机构：

[1] Tokyo Univ Sci, Photocatalysis Int Res Ctr PIRC, Tokyo, Japan

[2] Tokyo Inst Technol, Dept Chem & Mat Sci, Tokyo, Japan

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2016年 / 45卷 / 10期

关键词：

Al-doped ZnO; photocatalysis; conductivity; solution process; OXIDE THIN-FILMS; ZINC-OXIDE; THERMAL-TREATMENT; GLASS SUBSTRATE; TRANSPARENT; DEPOSITION; MICROSTRUCTURE; ABSORPTION; HYDROGEN;

D O I：

10.1007/s11664-016-4751-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have fabricated Al-doped ZnO films by a spin-spray method, achieving high conductivity by Al-ion doping and photocatalytic activity of the ZnO. The surface morphology of the as-deposited films was varied by changing the Al concentration and addition of citrate ions. As-deposited Al-doped ZnO film without citrate ions showed rod array structure with increasing rod width as the Al concentration was increased. Meanwhile, Al-doped ZnO film deposited with addition of citrate ions changed to exhibit dense and continuous surface morphology with high transmittance of 85%. The lowest resistivity recorded for undoped and Al-doped ZnO film was 2.1 9 10(-2) Omega cm and 5.9 x 10(-3) Omega cm, after ultraviolet (UV) irradiation. The reason for the decreased resistivity is thought to be that Al-ion doping and the photocatalytic activity of ZnO contributed to improve the conductivity.

引用

页码：4875 / 4880

页数：6

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