Dependence of Zn1-xMgxO:P film properties on magnesium concentration

被引：2

作者：

Kim, H. S. ^{[1
]}

Lugo, F. ^{[1
]}

Pearton, S. J. ^{[1
]}

Norton, D. P. ^{[1
]}

Ren, F. ^{[2
]}

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2008年 / 26卷 / 03期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1116/1.2917079

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The dependence of p-type conversion on Mg content in Zn1-xMgxO:P films (x=0.1,0.05) is examined. As-grown Zn0.95Mg0.05O:P films were n type but converted to p type after rapid thermal annealing. p-type Zn1-xMgxO:P films were successfully achieved without post-thermal annealing treatments for a Mg content of x=0.10. Increasing magnesium content in the ZnMgO:P solid solution generally degrades the luminescence properties, suggesting the formation of nonradiative states. (C) 2008 American Vacuum Society.

引用

页码：968 / 972

页数：5

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