Crystallization characteristics of nitrogen-doped Sb2Te3 films for PRAM application

被引：24

作者：

Kim, Myoung Sub ^{[1
]}

Cho, Sung Hyuk ^{[1
]}

Hong, Suk Kyoung ^{[2
]}

Roh, Jae Sung ^{[2
]}

Choi, Doo Jin ^{[1
]}

机构：

[1] Yonsei Univ, Dept Ceram Engn, Seoul 120749, South Korea

[2] Hynix Semicond Inc, Memory R&D Div, Ichon Si 467701, Kyoungki Do, South Korea

来源：

CERAMICS INTERNATIONAL | 2008年 / 34卷 / 04期

关键词：

films; electrical properties; Sb2Te3; PRAM; sputter;

D O I：

10.1016/j.ceramint.2007.09.078

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The Sb2Te3 film is an attractive candidate for phase change random access memory (PRAM) due to its rapid crystallization speed. However, the Sb2Te3 film has unstable amorphous phase. In order to improve the phase stability and easy reamorphization, the nitrogen-doped Sb2Te3 films were proposed. The characteristics of nitrogen-doped Sb2Te3 films were investigated using the secondary ion mass spectroscopy (SIMS), 4-point probe technique, X-ray diffraction and static test. The nitrogen doping caused the increase of crystallization temperature and sheet resistance of the Sb2Te3 films. Furthermore, the crystallization speed of nitrogen-doped Sb2Te3 film was superior to the Ge2Sb2Te5 film. (c) 2007 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

引用

页码：1043 / 1046

页数：4

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