Wide dynamic range snapshot APS for ultra low-power applications

被引:6
作者
Fish, A [1 ]
Belenky, A
Yadid-Pecht, O
机构
[1] VLSI Syst Ctr, IL-84105 Beer Sheva, Israel
[2] Univ Calgary, Dept Elect & Comp Engn, Calgary, AB T2N 1N4, Canada
关键词
active pixel sensor (APS); low-power sensor; snapshot CMOS imager; wide dynamic range (WDR) sensor;
D O I
10.1109/TCSII.2005.852193
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A novel wide dynamic range (WDR) snapshot active pixel sensor for ultra-low power applications is presented. The proposed imager allows capturing of fast moving objects in the field of view and provides WDR by applying adaptive exposure time to each pixel, according to the local illumination intensity level. Driven by low-power dissipation requirements, the proposed pixel is operated by dual low voltage supplies (1.2 and 1.8 V) and utilizes an advanced low-power sensor design methodology. A test chip of a 32 * 32 array has been implemented in a standard 0.35-um CMOS technology. A single pixel occupies 18 * 32 mu m area and is expected to dissipate 18.5 nW at video rate. System architecture and operation are discussed and simulation results are presented.
引用
收藏
页码:729 / 733
页数:5
相关论文
共 14 条
[1]   Vertically integrated sensors for advanced imaging applications [J].
Benthien, S ;
Lulé, T ;
Schneider, B ;
Wagner, M ;
Verhoeven, M ;
Böhm, M .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2000, 35 (07) :939-945
[2]   A 1.5-V 550-μW 176 x 144 autonomous CMOS active pixel image sensor [J].
Cho, KB ;
Krymski, AI ;
Fossum, ER .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (01) :96-105
[3]  
CULURCIELLO E, 2001, IEEE INT SOL STAT CI, P92
[4]  
FOSSUM ER, 1997, IEEE T ELECTRON DEV, V44, P10
[5]   A computational image sensor with adaptive pixel-based integration time [J].
Hamamoto, T ;
Aizawa, K .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2001, 36 (04) :580-585
[6]   A low-power low-noise ultrawide-dynamic-range CMOS imager with pixel-parallel A/D conversion [J].
McIlrath, LG .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2001, 36 (05) :846-853
[7]   Gate-diffusion input (GDI): A power-efficient method for digital combinatorial circuits [J].
Morgenshtein, A ;
Fish, A ;
Wagner, IA .
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2002, 10 (05) :566-581
[8]   Novel CMOS image sensor with a 132-dB dynamic range [J].
Stoppa, D ;
Simoni, A ;
Gonzo, L ;
Gottardi, M ;
Dalla Betta, GF .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2002, 37 (12) :1846-1852
[9]  
Wong HSP, 1997, INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST, P201, DOI 10.1109/IEDM.1997.650332
[10]   A 1.0-V VDD CMOS active-pixel sensor with complementary pixel architecture and pulsewidth modulation fabricated with a 0.25-μm CMOS process [J].
Xu, C ;
Zhang, WQ ;
Ki, WH ;
Chan, M .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2002, 37 (12) :1853-1859