Critical assessment of soft breakdown stability time and the implementation of new post-breakdown methodology for ultra-thin gate oxides

被引：0

作者：

Wu, E ^{[1
]}

Suñé, J ^{[1
]}

Linder, B ^{[1
]}

Stathis, J ^{[1
]}

Lai, W ^{[1
]}

机构：

[1] IBM Co, Microelect Div, Essex Jct, VT USA

来源：

2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST | 2003年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：919 / 922

页数：4

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