Transmission electron microscopy characterization of HfO2/GaAs(001) heterostructures grown by molecular beam epitaxy

被引：8

作者：

Liou, S. C. ^{[1
]}

Chu, M. -W. ^{[1
]}

Chen, C. H. ^{[1
]}

Lee, Y. J. ^{[2
]}

Chang, P. ^{[2
]}

Lee, W. C. ^{[2
]}

Hong, M. ^{[2
]}

Kwo, J. ^{[3
]}

机构：

[1] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 106, Taiwan

[2] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan

[3] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30013, Taiwan

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2008年 / 91卷 / 04期

关键词：

D O I：

10.1007/s00339-008-4493-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Transmission electron microscopy structural characterization of HfO2/GaAs(001) heterostructures grown by molecular beam epitaxy with a film thickness of similar to 5 nm was conducted. The study indicates that the room-temperature as-grown films are amorphous and the films crystallize into the monoclinic phase upon in situ post annealing at 540 degrees C in the growth chamber. Both types of films show an atomically sharp interface with GaAs(001) substrates. The crystalline monoclinic HfO2 films exhibit c-oriented epitaxy on the substrate and consist of 90 degrees domains. The formation of 90 degrees domains in the heterostructures, the details of the domain-wall configurations, and the possible impact of the walls and the frequently observed anti-phase boundaries in the films on electrical properties of the heterostructures are discussed.

引用

页码：585 / 589

页数：5

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