X-ray Reflectivity and Photoelectron Spectroscopy of Superlattices with Silicon Nanocrystals

被引：4

作者：

Zhigunov, D. M. ^{[1
]}

Kamenskikh, I. A. ^{[1
]}

Lebedev, A. M. ^{[2
]}

Chumakov, R. G. ^{[2
]}

Logachev, Yu. A. ^{[1
]}

Yakunin, S. N. ^{[2
]}

Kashkarov, P. K. ^{[1
,2
]}

机构：

[1] Moscow MV Lomonosov State Univ, Fac Phys, Moscow 119991, Russia

[2] Kurchatov Inst, Natl Res Ctr, Moscow 123182, Russia

来源：

JETP LETTERS | 2017年 / 106卷 / 08期

关键词：

OPTICAL-PROPERTIES; MATRIX;

D O I：

10.1134/S0021364017200140

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The structural properties and features of the chemical composition of SiOxNy/SiO2, SiOxNy/Si3N4, and SiNx/Si3N4 multilayer thin films with ultrathin (1-1.5 nm) barrier SiO2 or Si3N4 layers are studied. The films have been prepared by plasma chemical vapor deposition and have been annealed at a temperature of 1150 degrees C for the formation of silicon nanocrystals in the SiOxNy or SiNx silicon-rich layers with a nominal thickness of 5 nm. The period of superlattices in the studied samples has been estimated by X-ray reflectivity. The phase composition of superlattices has been studied by X-ray electron spectroscopy using the decomposition of photoelectron spectra of the Si 2p, N 1s, and O 1s levels into components corresponding to different charge states of atoms.

引用

页码：517 / 521

页数：5

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