X-ray Reflectivity and Photoelectron Spectroscopy of Superlattices with Silicon Nanocrystals

被引：4
|
作者：
Zhigunov, D. M. [1 ]
Kamenskikh, I. A. [1 ]
Lebedev, A. M. [2 ]
Chumakov, R. G. [2 ]
Logachev, Yu. A. [1 ]
Yakunin, S. N. [2 ]
Kashkarov, P. K. [1 ,2 ]
机构：
[1] Moscow MV Lomonosov State Univ, Fac Phys, Moscow 119991, Russia
[2] Kurchatov Inst, Natl Res Ctr, Moscow 123182, Russia
来源：
JETP LETTERS | 2017年 / 106卷 / 08期
关键词：
OPTICAL-PROPERTIES; MATRIX;
D O I：
10.1134/S0021364017200140
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The structural properties and features of the chemical composition of SiOxNy/SiO2, SiOxNy/Si3N4, and SiNx/Si3N4 multilayer thin films with ultrathin (1-1.5 nm) barrier SiO2 or Si3N4 layers are studied. The films have been prepared by plasma chemical vapor deposition and have been annealed at a temperature of 1150 degrees C for the formation of silicon nanocrystals in the SiOxNy or SiNx silicon-rich layers with a nominal thickness of 5 nm. The period of superlattices in the studied samples has been estimated by X-ray reflectivity. The phase composition of superlattices has been studied by X-ray electron spectroscopy using the decomposition of photoelectron spectra of the Si 2p, N 1s, and O 1s levels into components corresponding to different charge states of atoms.
引用
收藏
页码：517 / 521
页数：5
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