Electronic Conduction Mechanisms in Insulators

被引:45
作者
Chiang, Tsung-Han [1 ]
Wager, John F. [1 ]
机构
[1] Oregon State Univ, Sch Elect Engn & Comp Sci, Corvallis, OR 97330 USA
基金
美国国家科学基金会;
关键词
Bulk-limited conduction; injection-limited conduction; insulator; leakage current; Ohmic contact; CHARGE-LIMITED CURRENTS; POOLE-FRENKEL; TRANSPORT; EMISSION;
D O I
10.1109/TED.2017.2776612
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The current density-electric field (J - xi) characteristics of four insulators of dramatically different electrical qualities are assessed in terms of their operative electronic conduction mechanisms. Conduction in the two high-quality insulators is dominated by Ohmic conduction and Fowler-Nordheim tunneling, whereas conduction in the two low-quality insulators involves Ohmic conduction and space-charge limited current (SCLC). Ohmic conduction and SCLC are somewhat puzzling mechanisms for contributing to insulator leakage current since they require the existence of an Ohmic contact at the cathode. Our conventional understanding of an Ohmic contact makes it difficult to ascertain how an Ohmic contact could be formed to a wide bandgap insulator. This Ohmic contact dilemma is resolved by formulating an equivalent circuit appropriate for assessing the J - xi characteristics of an insulator and then recognizingthat an insulator Ohmic contact is obtained when the injection-limited current density from the cathode electrode is greater than that of the operative bulk-limited current density, i.e., Ohmic or SCLC for the four insulators under consideration.
引用
收藏
页码:223 / 230
页数:8
相关论文
共 31 条
  • [1] [Anonymous], [No title captured]
  • [2] [Anonymous], 2004, DIELECTRIC PHENOMENA
  • [3] Impact of temperature increments on tunneling barrier height and effective electron mass for plasma nitrided thin SiO2 layer on a large wafer area
    Aygun, G.
    Roeder, G.
    Erlbacher, T.
    Wolf, M.
    Schellenberger, M.
    Pfitzner, L.
    [J]. JOURNAL OF APPLIED PHYSICS, 2010, 108 (07)
  • [4] Direct extraction of the electron tunneling effective mass in ultrathin SiO2
    Brar, B
    Wilk, GD
    Seabaugh, AC
    [J]. APPLIED PHYSICS LETTERS, 1996, 69 (18) : 2728 - 2730
  • [5] Thin-film electroluminescent device physics modeling
    Hitt, JC
    Bender, JP
    Wager, JF
    [J]. CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 2000, 25 (01) : 29 - 85
  • [6] Hori T., 1997, GATE DIELECTRICS MOS
  • [7] KAPOOR VJ, 1977, J APPL PHYS, V48, P739, DOI 10.1063/1.323664
  • [8] Charge transport in porous silicon: Considerations for achievement of efficient electroluminescence
    Kocka, J
    Oswald, J
    Fejfar, A
    Sedlacik, R
    Zelezny, V
    TheHa, H
    Luterova, K
    Pelant, I
    [J]. THIN SOLID FILMS, 1996, 276 (1-2) : 187 - 190
  • [9] Lampert M.A., 1970, Current Injection in Solids
  • [10] SIMPLIFIED THEORY OF SPACE-CHARGE-LIMITED CURRENTS IN AN INSULATOR WITH TRAPS
    LAMPERT, MA
    [J]. PHYSICAL REVIEW, 1956, 103 (06): : 1648 - 1656