High thermoelectric properties of PbTe doped with Bi2Te3 and Sb2Te3

被引：0

作者：

Zhu, PW ^{[1
]}

Imai, Y

Yukihiro, I

Yoshikazi, S

Jia, XP

Zou, GT

机构：

[1] Natl Inst Mat Sci, Ecomat Res Ctr, Tsukuba, Ibaraki 3050047, Japan

[2] Jilin Univ, Natl Lab Superhard Mat, Changchun 130012, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2005年 / 22卷 / 08期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The composition-dependent thermoelectric properties of lead telluride (PbTe) doped with bismuth telluride (Bi2Te3), antimony telluride (Sb2Te3) and (BiSb)(2)Te-3 have been studied at room temperature. All the samples exhibit small thermal conductivity. The figures of merit, 7.63, 1.03 and 8.97 x 10(-4), have been obtained in PbTe with these dopants, respectively. These values are several times higher than those of PbTe containing other dopants with small grain sizes. The high thermoelectric performance is explained by electronic topological transition induced by alloying. The results indicate that these dopants are effective to enhance the thermoelectric performance of PbTe.

引用

页码：2103 / 2105

页数：3

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