Controlled p- and n-type doping of Fe2O3 nanobelt field effect transistors -: art. no. 013113

被引：99

作者：

Fan, ZY

Wen, XG

Yang, SH

Lu, JG ^{[1
]}

机构：

[1] Univ Calif Irvine, Dept Chem Engn & Mat Sci, Irvine, CA 92697 USA

[2] Univ Calif Irvine, Dept Elect Engn & Comp Sci, Irvine, CA 92697 USA

[3] Hong Kong Univ Sci & Technol, Dept Chem, Kowloon, Hong Kong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 01期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.1977203

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pure alpha-Fe2O3 nanobelts are configured as field effect transistors and electrical transport studies demonstrate their n-type behavior. In order to control the electrical properties of the fabricated transistor, the nanobelt channels are doped with zinc. Depending on the doping condition, alpha-Fe2O3 nanobelts can be modified to either p-type or n-type with enhanced conductivity and electron mobility. Such behavior change is exhibited in the variation of the current-voltage (I-V) and I-V-g characteristics. (c) 2005 American Institute of Physics.

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页数：3

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