Embedded Barrier Layer for Reducing the Effect Out of Band Radiation in EUV Lithography

被引：0

作者：

Du, Ke ^{[1
]}

Siauw, Meiliana ^{[1
]}

Valade, David ^{[1
]}

Jasieniak, Marek ^{[2
]}

Voelcker, Nico ^{[2
]}

Trefonas, Peter ^{[3
]}

Thackeray, Jim ^{[3
]}

Blakey, Idriss ^{[1
]}

Whittaker, Andrew ^{[1
]}

机构：

[1] Univ Queensland, Australian Inst Bioengn & Nanotechnol, Brisbane, Qld 4072, Australia

[2] Univ South Australia, Ian Wark Res Inst, Mawson Lakes, SA 5095, Australia

[3] Dow Chem Co USA, 455 Forest St, Marlborough, MA 01752 USA

来源：

ADVANCES IN PATTERNING MATERIALS AND PROCESSES XXXIV | 2017年 / 10146卷

基金：

澳大利亚研究理事会;

关键词：

EUVL; OOB; Embedded Barrier Layer; RAFT polymerization; RAFT POLYMERIZATION; SURFACE-PROPERTIES; POLYMERS;

D O I：

10.1117/12.2270480

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Out of band (OOB) radiation from the EUV source has significant implications for the performance of EUVL photoresists. Here we introduce a surface-active polymer additive, capable of partitioning to the top of the resist film during casting and annealing, to protect the underlying photoresist from OOB radiation. Copolymers were prepared using reversible addition-fragmentation chain transfer (RAFT) polymerization, and rendered surface active by chain extension with a block of fluoro-monomer. Films were prepared from the EUV resist with added surface-active Embedded Barrier Layer (EBL), and characterized using measurements of contact angles and spectroscopic ellipsometry. Finally, the lithographic performance of the resist containing the EBL was evaluated using Electron Beam Lithography exposure.

引用

页数：7

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