Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(013) substrates

被引：9

作者：

Voitsekhovskii, A. V. ^{[1
]}

Nesmelov, S. N. ^{[1
]}

Dzyadukh, S. M. ^{[1
]}

Varavin, V. S. ^{[2
]}

Dvoretskii, S. A. ^{[1
,2
]}

Mikhailov, N. N. ^{[2
]}

Yakushev, M. V. ^{[2
]}

Sidorov, G. Yu. ^{[2
]}

机构：

[1] Natl Res Tomsk State Univ, 36 Lenin Ave, Tomsk 634050, Russia

[2] Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, 13 Akad Lavrenteva Ave, Novosibirsk 630090, Russia

来源：

INFRARED PHYSICS & TECHNOLOGY | 2017年 / 87卷

基金：

俄罗斯基础研究基金会;

关键词：

Metal-insulator-semiconductor structure; MCT; Molecular beam epitaxy; Silicon substrates; Variable-gap layer; Capacitance-voltage characteristic; Space charge region; MOLECULAR-BEAM EPITAXY; ADMITTANCE MEASUREMENTS; DEFECTS; HGCDTE;

D O I：

10.1016/j.infrared.2017.10.006

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Metal-insulator-semiconductor (MIS) structures based on n(p)-Hg1-xCdxTe (x = 0.22-0.40) with near-surface variable-gap layers were grown by the molecular-beam epitaxy (MBE) technique on the Si (0 1 3) substrates. Electrical properties of MIS structures were investigated experimentally at various temperatures (9-77 K) and directions of voltage sweep. The "narrow swing" technique was used to determine the spectra of fast surface states with the exception of hysteresis effects. It is established that the density of fast surface states at the MCT/Al2O3 interface at a minimum does not exceed 3 x 10(10) eV(-1) x cm(-2). For MIS structures based on n-MCT/Si(0 1 3), the differential resistance of the space-charge region in strong inversion mode in the temperature range 50-90 K is limited by the Shockley-Read-Hall generation in the space-charge region. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：129 / 133

页数：5

共 34 条

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PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2023, 26 (01) :445-454

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