Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(013) substrates

被引：9

作者：

Voitsekhovskii, A. V. ^{[1
]}

Nesmelov, S. N. ^{[1
]}

Dzyadukh, S. M. ^{[1
]}

Varavin, V. S. ^{[2
]}

Dvoretskii, S. A. ^{[1
,2
]}

Mikhailov, N. N. ^{[2
]}

Yakushev, M. V. ^{[2
]}

Sidorov, G. Yu. ^{[2
]}

机构：

[1] Natl Res Tomsk State Univ, 36 Lenin Ave, Tomsk 634050, Russia

[2] Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, 13 Akad Lavrenteva Ave, Novosibirsk 630090, Russia

来源：

INFRARED PHYSICS & TECHNOLOGY | 2017年 / 87卷

基金：

俄罗斯基础研究基金会;

关键词：

Metal-insulator-semiconductor structure; MCT; Molecular beam epitaxy; Silicon substrates; Variable-gap layer; Capacitance-voltage characteristic; Space charge region; MOLECULAR-BEAM EPITAXY; ADMITTANCE MEASUREMENTS; DEFECTS; HGCDTE;

D O I：

10.1016/j.infrared.2017.10.006

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Metal-insulator-semiconductor (MIS) structures based on n(p)-Hg1-xCdxTe (x = 0.22-0.40) with near-surface variable-gap layers were grown by the molecular-beam epitaxy (MBE) technique on the Si (0 1 3) substrates. Electrical properties of MIS structures were investigated experimentally at various temperatures (9-77 K) and directions of voltage sweep. The "narrow swing" technique was used to determine the spectra of fast surface states with the exception of hysteresis effects. It is established that the density of fast surface states at the MCT/Al2O3 interface at a minimum does not exceed 3 x 10(10) eV(-1) x cm(-2). For MIS structures based on n-MCT/Si(0 1 3), the differential resistance of the space-charge region in strong inversion mode in the temperature range 50-90 K is limited by the Shockley-Read-Hall generation in the space-charge region. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：129 / 133

页数：5

共 34 条

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Bazovkin, V. M.
Dvoretskiy, S. A.
Guzev, A. A.
Kovchavtsev, A. P.
Marin, D. V.
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Sabinina, I. V.
Sidorov, Yu. G.
Sidorov, G. Yu.
Tsarenko, A. V.
Varavin, V. S.
Vasiliev, V. V.
Yakushev, M. V.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 13 NO 7-9, 2016, 13 (7-9): : 651 - 655
[2] Electrical properties of MBE grown Si3N4-cubic GaN MIS structures
Zado, A.
Lischka, K.
As, D. J.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, 2012, 9 (3-4): : 1088 - 1091
[3] Influence of near-surface graded-gap layers on electrical characteristics of MIS-structures based on MBE grown HgCdTe
Voitsekhovskii, A. V.
Nesmelov, S. N.
Dzyadukh, S. M.
Varavin, V. S.
Dvoretskii, S. A.
Mikhailov, N. N.
Sidorov, Yu G.
Yakushev, M. V.
OPTO-ELECTRONICS REVIEW, 2010, 18 (03) : 259 - 262
[4] Electrophysical characteristics of MIS structures based on graded band-gap MBE HgCdTe with grown in situ CdTe as a dielectric
Voitsekhovskii, A. V.
Nesmelov, S. N.
Dzyadukh, S. M.
Varavin, V. S.
Dvoretskii, S. A.
Mikhailov, N. N.
Sidorov, Yu G.
Vasil'ev, V. V.
Yakushev, M. V.
RUSSIAN PHYSICS JOURNAL, 2010, 53 (02) : 148 - 154
[5] Investigation of Characteristics of MIS Structures Based on MBE n-HgCdTe NBνN Barrier Structures by Admittance Spectroscopy
Voitsekhovskii, A. V.
Dzyadukh, S. M.
Gorn, D. I.
Dvoretskii, S. A.
Mikhailov, N. N.
Sidorov, G. Yu.
Yakushev, M. V.
JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS, 2023, 68 (09) : 1036 - 1039
[6] Investigation of Characteristics of MIS Structures Based on MBE n-HgCdTe NBνN Barrier Structures by Admittance Spectroscopy
A. V. Voitsekhovskii
S. M. Dzyadukh
D. I. Gorn
S. A. Dvoretskii
N. N. Mikhailov
G. Yu. Sidorov
M. V. Yakushev
Journal of Communications Technology and Electronics, 2023, 68 : 1036 - 1039
[7] Terahertz photoconductivity of double acceptors in narrow gap HgCdTe epitaxial films grown by molecular beam epitaxy on GaAs(013) and Si(013) substrates
Rumyantsev, V. V.
Kozlov, D. V.
Morozov, S. V.
Fadeev, M. A.
Kadykov, A. M.
Teppe, F.
Varavin, V. S.
Yakushev, M. V.
Mikhailov, N. N.
Dvoretskii, S. A.
Gavrilenko, V. I.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2017, 32 (09)
[8] Hysteresis Phenomena in mis Structures Based on Graded-Gap MBE Hgcdte with a Two-Layer Plasma-Chemical Insulator SIO2/SI3N4
Voitsekhovskii, D. V.
Nesmelov, S. N.
Dzyadukh, S. M.
RUSSIAN PHYSICS JOURNAL, 2015, 58 (04) : 540 - 551
[9] Hysteresis Phenomena in mis Structures Based on Graded-Gap MBE Hgcdte with a Two-Layer Plasma-Chemical Insulator SIO2/SI3N4
А. V. Voitsekhovskii
S. N. Nesmelov
S. M. Dzyadukh
Russian Physics Journal, 2015, 58 : 540 - 551
[10] Admittance of MIS structures based on graded-gap MBE HgCdTe with Al2O3 insulator
Voitsekhovskii, Alexander V.
Nesmelov, Sergey N.
Dzyadukh, Stanislav M.
Vasil'ev, Vladimir V.
Varavin, Vasiliy S.
Dvoretsky, Sergey A.
Mikhailov, Nikolay N.
Yakushev, Maxim V.
Sidorov, Georgiy Y.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 13 NO 7-9, 2016, 13 (7-9): : 647 - 650

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