-Ga2O3

被引：10

作者：

Modak, Sushrut ^{[1
]}

Chernyak, Leonid ^{[1
]}

Schulte, Alfons ^{[1
]}

Xian, Minghan ^{[2
]}

Ren, Fan ^{[2
]}

Pearton, Stephen J. ^{[3
]}

Ruzin, Arie ^{[4
]}

Kosolobov, Sergey S. ^{[5
]}

Drachev, Vladimir P. ^{[5
,6
]}

机构：

[1] Univ Cent Florida, Dept Phys, Orlando, FL 32816 USA

[2] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[3] Univ Florida, Mat Sci & Engn, Gainesville, FL 32611 USA

[4] Tel Aviv Univ, Sch Elect Engn, IL-69978 Tel Aviv, Israel

[5] Skolkovo Inst Sci & Technol, Ctr Design Mfg & Mat, Nobel St,Bldg 1, Moscow 121205, Russia

[6] Univ North Texas, Dept Phys, Denton, TX 76203 USA

来源：

AIP ADVANCES | 2021年 / 11卷 / 12期

基金：

美国国家科学基金会;

关键词：

LUMINESCENCE; SEMICONDUCTORS; OXIDE;

D O I：

10.1063/5.0073692

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Temperature dependent continuous and time-resolved cathodoluminescence measurements were employed to understand the luminescence from Si-doped beta-Ga2O3 prior to irradiation and after 10 MeV proton and 18 MeV alpha-particle irradiation. The shape and location of the luminescence components [ultraviolet luminescence (UVL & PRIME;) at 3.63 eV, UVL at 3.3 eV, and blue-luminescence at 2.96 eV] obtained from Gaussian decomposition did not change in either width or peak location, indicating that new radiation-induced trap-levels were non-radiative in nature between the 4.5 and 310 K temperature range. Activation energies, associated with thermal quenching of UVL & PRIME; and UVL bands, show temperature dependence, suggesting ionization of shallow Si-donors and a thermally activated non-radiative process.

引用

页数：6

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