Enriched Surface Oxygen Vacancies of Photoanodes by Photoetching with Enhanced Charge Separation

A facile photoetching approach is described that alleviates the negative effects from bulk defects by confining the oxygen vacancy (O-vac) at the surface of BiVO4 photoanode, by 10-minute photoetching. This strategy could induce enriched O-vac at the surface of BiVO4, which avoids the formation of excessive bulk defects. A mechanism is proposed to explain the enhanced charge separation at the BiVO4 /electrolyte interface, which is supported by density functional theory (DFT) calculations. The optimized BiVO4 with enriched surface O-vac presents the highest photocurrent among undoped BiVO4 photoanodes. Upon loading FeOOH/NiOOH cocatalysts, photoetched BiVO4 photoanode reaches a considerable water oxidation photocurrent of 3.0 mA cm(-2) at 0.6 V vs. reversible hydrogen electrode. An unbiased solar-to-hydrogen conversion efficiency of 3.5 % is realized by this BiVO4 photoanode and a Si photocathode under 1 sun illumination.