First-principles study of the impact of the atomic configuration on the electronic properties of AlxGa1-xN alloys

被引:22
作者
Kyrtsos, Alexandros [1 ]
Matsubara, Masahiko [1 ]
Bellotti, Enrico [1 ,2 ]
机构
[1] Boston Univ, Dept Elect & Comp Engn, Boston, MA 02215 USA
[2] Boston Univ, Div Mat Sci & Engn, Boston, MA 02215 USA
关键词
BAND OFFSETS; SPINODAL DECOMPOSITION; PHASE-SEPARATION; BOWING PARAMETER; FILMS; GAP; ALN; AL(X)GA1-XN; STABILITY; CRYSTAL;
D O I
10.1103/PhysRevB.99.035201
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We employ first-principles calculations in the formalism of standard and hybrid density functional theory to study the electronic and structural properties of wurtzite AlxGa1-xN alloys. We address the discrepancies observed in literature regarding essential electronic properties of these alloys and we investigate the dependence of these properties on the atomic ordering and composition. We show that the bowing parameter is significantly affected by the atomic ordering, ranging from zero to strong downward bowing. The effects of atomic ordering of the alloys on their band offset with respect to the pure phases are also investigated. Finally, using the effective band structure approach, we study the electronic band structure of the random alloys.
引用
收藏
页数:12
相关论文
共 110 条
[101]   MOCVB growth of GaBN on 6H-SiC (0001) substrates [J].
Wei, CH ;
Xie, ZY ;
Edgar, JH ;
Zeng, KC ;
Lin, JY ;
Jiang, HX ;
Chaudhuri, J ;
Ignatiev, C ;
Braski, DN .
JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (04) :452-456
[102]   Valence band splittings and band offsets of AlN, GaN, and InN [J].
Wei, SH ;
Zunger, A .
APPLIED PHYSICS LETTERS, 1996, 69 (18) :2719-2721
[103]   Composition dependent bilayer atomic ordering in AlxGa1-xN films examined by polarization-dependent extended x-ray absorption fine structure [J].
Woicik, J. C. ;
Ludwig, K. F., Jr. ;
Moustakas, T. D. .
APPLIED PHYSICS LETTERS, 2012, 100 (16)
[104]   Investigation of the chemistry and electronic properties of metal gallium nitride interfaces [J].
Wu, CI ;
Kahn, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (04) :2218-2223
[105]   Electron affinity at aluminum nitride surfaces [J].
Wu, CI ;
Kahn, A ;
Hellman, ES ;
Buchanan, DNE .
APPLIED PHYSICS LETTERS, 1998, 73 (10) :1346-1348
[106]   Universal bandgap bowing in group-III nitride alloys [J].
Wu, J ;
Walukiewicz, W ;
Yu, KM ;
Ager, JW ;
Li, SX ;
Haller, EE ;
Lu, H ;
Schaff, WJ .
SOLID STATE COMMUNICATIONS, 2003, 127 (06) :411-414
[107]   Effects of strain on the band structure of group-III nitrides [J].
Yan, Qimin ;
Rinke, Patrick ;
Janotti, Anderson ;
Scheffler, Matthias ;
Van de Walle, Chris G. .
PHYSICAL REVIEW B, 2014, 90 (12)
[108]   Strain effects in group-III nitrides: Deformation potentials for AlN, GaN, and InN [J].
Yan, Qimin ;
Rinke, Patrick ;
Scheffler, Matthias ;
Van de Walle, Chris G. .
APPLIED PHYSICS LETTERS, 2009, 95 (12)
[109]   PROPERTIES OF ALXGA1-XN FILMS PREPARED BY REACTIVE MOLECULAR-BEAM EPITAXY [J].
YOSHIDA, S ;
MISAWA, S ;
GONDA, S .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :6844-6848
[110]   Energy band bowing parameter in AlxGa1-xN alloys [J].
Yun, F ;
Reshchikov, MA ;
He, L ;
King, T ;
Morkoç, H ;
Novak, SW ;
Wei, LC .
JOURNAL OF APPLIED PHYSICS, 2002, 92 (08) :4837-4839