New n-type semiconductor material based on styryl fullerene for organic field-effect transistors

被引：6

作者：

Tuktarov, Airat R. ^{[1
]}

Chobanov, Nuri M. ^{[1
]}

Sadretdinova, Zarema R. ^{[1
]}

Salikhov, Renat B. ^{[2
]}

Mullagaliev, Ilnur N. ^{[2
]}

Salikhov, Timur R. ^{[2
]}

Dzhemilev, Usein M. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Petrochem & Catalysis, Ufa 450075, Russia

[2] Bashkir State Univ, Inst Phys & Technol, Ufa 450076, Russia

来源：

MENDELEEV COMMUNICATIONS | 2021年 / 31卷 / 05期

基金：

俄罗斯科学基金会;

关键词：

60]fullerene; styryl fullerene; PCBM; organic semiconductor; organic field-effect transistor; electron mobility; THIN-FILM TRANSISTORS; ACCEPTORS; DERIVATIVES; PCBM; C-60;

D O I：

10.1016/j.mencom.2021.09.016

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Organic field-effect transistors with styryl fullerene as a semi conductor layer applied by centrifugation are considered. Electron mobility in the transistors was 0.067 +/- 10% cm(2) V-1 s(-1), whereas the mobility of electrons in these devices after the vacuum deposition of a semiconductor layer was much lower (0.023 +/- 10% cm(2) V-1 s(-1)).

引用

页码：641 / 643

页数：3

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