Preparation of copper oxide thin film by the sol-gel-like dip technique and study of their structural and optical properties

被引:381
作者
Ray, SC [1 ]
机构
[1] MCKV Inst Engn, Dept Phys, Howrah 711204, W Bengal, India
关键词
sol-gel-like dip technique; baking temperature (T-B); XRD; optical direct band gap;
D O I
10.1016/S0927-0248(00)00364-0
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Copper oxide films are prepared using a methanolic solution of cupric chloride (CuCl2 2H(2)O) by the sol-gel-like dip technique at different baking temperatures. XRD study confirms that the films are of Cu2O phase when prepared at a baking temperature of 360 degreesC and CuO phase when prepared at 400-500 degreesC baking temperature. The optical direct band gap energies for Cu2O and CuO films calculated from optical absorption measurements are 2.10 and 1.90eV, respectively, which are quite comparable with the reported values. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:307 / 312
页数:6
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