Recent developments in vertical Bloch line data storage

被引：0
|
作者：
Blaes, BR [1 ]
Katti, RR [1 ]
Lieneweg, U [1 ]
Natale, M [1 ]
von Wachter, O [1 ]
Wesseling, E [1 ]
机构：
[1] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA
来源：
SEVENTH BIENNIAL IEEE INTERNATIONAL NONVOLATILE MEMORY TECHNOLOGY CONFERENCE, PROCEEDINGS | 1998年
关键词：
D O I：
10.1109/NVMT.1998.723223
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Data storage systems based on vertical Bloch lines have been fabricated in 2 mu m bubble garnet material. The input/output line was fully operational, and experiments in reading and writing showed an encouraging correlation between input and output. Further effort is required to solidify these processes and to establish bit propagation around the storage domains.
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页码：72 / 76
页数：5
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