Hot-electron relaxation in ZnO films

被引：6
作者：
Yang, M. D. [1 ,2 ]
Wu, S. W. [1 ,2 ]
Tong, S. C. [1 ,2 ]
Shu, G. W. [1 ,2 ]
Liu, Y. W. [1 ,2 ]
Shen, J. L. [1 ,2 ]
Lan, S. M. [3 ]
Wu, C. H. [4 ]
Huang, Y. H. [4 ]
Yang, T. N. [4 ]
机构：
[1] Chung Yuan Christian Univ, Dept Phys, Chungli, Taiwan
[2] Chung Yuan Christian Univ, Ctr Nanotechnol CYCU, Chungli, Taiwan
[3] Chung Yuan Christian Univ, Dept Elect Engn, Chungli, Taiwan
[4] Inst Nucl Energy Res Atom Energy Council, Long Tan, Taiwan
来源：
THIN SOLID FILMS | 2011年 / 519卷 / 10期
关键词：
ZnO films; Photoluminescence; Phonon; THIN-FILMS; RADIATIVE RECOMBINATION; PHOTOLUMINESCENCE; TRANSPORT; CARRIERS; SENSOR; GAAS; GAN;
D O I：
10.1016/j.tsf.2010.12.232
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The energy relaxation of hot electrons in ZnO films was investigated by the electric-field-dependent photoluminescence. From the high-energy tail of photoluminescence, the electron temperature of the hot electrons in ZnO was determined. Longitudinal optical phonon emission alone cannot explain the relationship between the electron temperature and the electron energy loss rate. Instead, it can be explained by a model based on a combination of both the acoustic and longitudinal optical phonon emissions. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：3421 / 3424
页数：4
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