Recent progress of silicon integrated light emitters and photodetectors for optical communication based on two-dimensional materials

被引:14
作者
LI, Feng [1 ,2 ]
Zheng, Jiabao [3 ]
Yao, Qi [1 ,2 ]
Bie, Ya-qing [1 ,2 ]
机构
[1] Sun Yet Sen Univ, Sch Elect & Informat Technol, Guangzhou 510006, Peoples R China
[2] Sun Yet Sen Univ, Guangdong Prov Key Lab Display Mat & Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510006, Peoples R China
[3] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA
基金
中国国家自然科学基金;
关键词
ENHANCED GRAPHENE PHOTODETECTOR; HIGH-RESPONSIVITY; EMITTING-DIODES; ELECTROOPTIC MODULATOR; MICROCAVITY LASERS; MATTER INTERACTION; EPITAXIAL-GROWTH; MONOLAYER MOS2; 2D MATERIALS; WAALS;
D O I
10.1364/OME.435902
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Van der Waals materials are expected to meet the miniaturization and integration challenges in photonic integrated circuits (PIC) as active devices for optical communication. Recently, ultralow threshold lasers, ultra-sensitive or large bandwidth photodetectors have been demonstrated on silicon photonics platforms that are compatible with the state-of-the-art CMOS process. Here we summarize the characteristics of these hetero-integrated light-emitting and photodetecting devices, with focuses on materials, physical mechanisms, and device performances. We also discuss the strategies of future PIC architectures for valley-photonics, hybrid and 3D integrations. This review aims to summarize the most recent progress and to help identify the challenges and opportunities in this rapidly developing area.
引用
收藏
页码:3298 / 3320
页数:23
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