Selective growth of InAs self-assembled quantum dots on nanopatterned SiO2/Si substrate

被引：20

作者：

Choi, BH ^{[1
]}

Park, CM

Song, SH

Son, MH

Hwang, SW

Ahn, D

Kim, EK

机构：

[1] Korea Univ, Sch Elect Engn, Seoul 136701, South Korea

[2] Univ Seoul Jeongnong, Inst Quantum Informat & Proc Syst, Seoul 130743, South Korea

[3] Korea Inst Sci & Technol, Semicond Mat Lab, Seoul 136650, South Korea

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 10期

关键词：

D O I：

10.1063/1.1352049

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the selective growth of InAs self-assembled quantum dots (SAQDs) on silicon-dioxide/silicon (SiO2/Si) substrates patterned in nanometer scale. The SiO2 thin film is found to be an efficient mask material for prohibiting the growth of InAs SAQDs, while the formation of stable SAQDs is observed on the exposed surface of Si. We have utilized this selectivity to demonstrate almost one-dimensional alignment of InAs SAQDs on Si stripes. The crystallinity of SAQDs is also identified by high-resolution transmission electron microscope observation. Our study opens up a possibility of reliably integrating III-V quantum dot devices with conventional Si circuits. (C) 2001 American Institute of Physics.

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页码：1403 / 1405

页数：3

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