Differential Electrically Insulated Magnetoelectric Spin-Orbit Logic Circuits

被引:11
作者
Li, Hai [1 ]
Lin, Chia-Ching [1 ]
Nikonov, Dmitri E. [1 ]
Young, Ian A. [1 ]
机构
[1] Intel Corp, Components Res, Hillsboro, OR 97124 USA
来源
IEEE JOURNAL ON EXPLORATORY SOLID-STATE COMPUTATIONAL DEVICES AND CIRCUITS | 2021年 / 7卷 / 01期
关键词
Beyond complementary metal-oxide-semiconductor (CMOS) logic; magnetoelectric (ME); SPICE; spin-orbit (SO); spintronic devices; DEVICES;
D O I
10.1109/JXCDC.2021.3105524
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Beyond complementary metal-oxide-semiconductor (CMOS) devices have functionalities different from CMOS transistors, and therefore, the development of novel circuits that leverage their properties is necessary for their practical application to computing. The magnetoelectric spin-orbit (MESO) device has been proposed as one of the promising energy-efficient beyond CMOS device candidates, and several basic circuit blocks have been demonstrated with MESO. In this work, we propose a new differential MESO device that enables differential logic circuit design with better interstage isolation. This improves the output voltage of MESO circuits, provides signal common-mode noise rejection, and eliminates any sneak current path. We demonstrate the functionality of multiple essential logic circuit blocks implemented with MESO devices.
引用
收藏
页码:18 / 25
页数:8
相关论文
共 17 条
[1]   Modeling and Circuit Design of Associative Memories With Spin-Orbit Torque FETs [J].
Afuye, Olalekan ;
Li, Xiang ;
Guo, Felicia ;
Jena, Debdeep ;
Ralph, Daniel C. ;
Molnar, Alyosha ;
Xing, Huili Grace ;
Apsel, Alyssa .
IEEE JOURNAL ON EXPLORATORY SOLID-STATE COMPUTATIONAL DEVICES AND CIRCUITS, 2019, 5 (02) :197-205
[2]  
[Anonymous], 2017, CADENCE VIRTUOSO SPE
[3]  
Behin-Aein B, 2010, NAT NANOTECHNOL, V5, P266, DOI [10.1038/nnano.2010.31, 10.1038/NNANO.2010.31]
[4]   Inversion Charge Boost and Transient Steep-Slope Induced by Free-Charge-Polarization Mismatch in a Ferroelectric-Metal-Oxide-Semiconductor Capacitor [J].
Chang, Sou-Chi ;
Avci, Uygar E. ;
Nikonov, Dmitri E. ;
Young, Ian A. .
IEEE JOURNAL ON EXPLORATORY SOLID-STATE COMPUTATIONAL DEVICES AND CIRCUITS, 2018, 4 :44-49
[5]  
Gelsinger P. P., 2001, 2001 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC (Cat. No.01CH37177), P22, DOI 10.1109/ISSCC.2001.912412
[6]  
Horowitz M, 2014, ISSCC DIG TECH PAP I, V57, P10, DOI 10.1109/ISSCC.2014.6757323
[7]   Spin polarization of amorphous CoFeB determined by point-contact Andreev reflection [J].
Huang, S. X. ;
Chen, T. Y. ;
Chien, C. L. .
APPLIED PHYSICS LETTERS, 2008, 92 (24)
[8]   Performance Characterization and Majority Gate Design for MESO-Based Circuits [J].
Liang, Zhaoxin ;
Mankalale, Meghna G. ;
Hu, Jiaxi ;
Zhao, Zhengyang ;
Wang, Jian-Ping ;
Sapatnekar, Sachin S. .
IEEE JOURNAL ON EXPLORATORY SOLID-STATE COMPUTATIONAL DEVICES AND CIRCUITS, 2018, 4 (02) :51-59
[9]   Synchronous Circuit Design With Beyond-CMOS Magnetoelectric Spin-Orbit Devices Toward 100-mV Logic [J].
Liu, Huichu ;
Manipatruni, Sasikanth ;
Morris, Daniel H. ;
Vaidyanathan, Kaushik ;
Nikonov, Dmitri E. ;
Karnik, Tanay ;
Young, Ian A. .
IEEE JOURNAL ON EXPLORATORY SOLID-STATE COMPUTATIONAL DEVICES AND CIRCUITS, 2019, 5 (01) :1-9
[10]   Room-temperature high spin-orbit torque due to quantum confinement in sputtered BixSe(1-x) films [J].
Mahendra, D. C. ;
Grassi, Roberto ;
Chen, Jun-Yang ;
Jamali, Mahdi ;
Hickey, Danielle Reifsnyder ;
Zhang, Delin ;
Zhao, Zhengyang ;
Li, Hongshi ;
Quarterman, P. ;
Lv, Yang ;
Li, Mo ;
Manchon, Aurelien ;
Mkhoyan, K. Andre ;
Low, Tony ;
Wang, Jian-Ping .
NATURE MATERIALS, 2018, 17 (09) :800-+