Fabrication of blue and green nitride light-emitting diodes

High-power blue and green light-emitting diodes (LEDs) with quantum well structures based on III-V nitrides were grown by metalorganic chemical vapor deposition on sapphire substrates. The typical blue LEDs had a peak wavelength of 450 nm and full width at half-maximum (FWHM) of 20 nm. The output power, the external quantum efficiency and the luminous intensity of blue LEDs at a forward current of 20 mA were 4 mW, 7.3% and 2 ed, respectively. The typical green LEDs had a peak wavelength of 520 nm and the FWHM of 40 nm. The output power, the external quantum efficiency and the luminous intensity of green LEDs at a forward current of 20 mA were 1 mW, 2.1% and 4 ed respectively.