Fabrication of open-top microchannel plate using deep X-ray exposure mask made with silicon on insulator substrate

被引:8
作者
Fujimura, T [1 ]
Ikeda, A
Etoh, S
Hattori, R
Kuroki, Y
Chang, SS
机构
[1] Kyushu Univ, Grad Sch Informat Sci & Elect Engn, Dept Elect, Fukuoka 8128581, Japan
[2] POSTECH, Pohang Accelerator Lab, Pohang 790784, South Korea
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2003年 / 42卷 / 6B期
关键词
open-top microchannel plate; high-aspect ratio; deep X-ray lithography; synchrotron radiation; SOI; PMMA; GPC;
D O I
10.1143/JJAP.42.4102
中图分类号
O59 [应用物理学];
学科分类号
摘要
We propose a high-aspect-ratio open-top microchannel plate structure. This type of microchannel plate has many advantages in electrophoresis. The plate was fabricated by deep X-ray lithography using synchrotron radiation (SR) light and the chemical wet etching process. A deep X-ray exposure mask was fabricated with a silicon on insulator (SOI) substrate. The patterned Si microstructure was micromachined into a thin Si membrane and a thick An X-ray absorber was embedded in it by electroplating. A plastic material, polymethylmethacrylate (PMMA) was used for the plate substrate. For reduction of the exposure time and high-aspect-ratio fast wet development, the fabrication condition was optimized with respect to not the exposure dose but to the PMMA mean molecular weight (M.W.) changing after deep X-ray exposure as measured by gel permeation chromatography (GPC). Decrement of the PMMA M.W. and increment of the wet developer temperature accelerated the etching rate. Under optimized fabrication conditions, a microchannel with 50 mum width through 1000 mum PMMA plate, with a high aspect ratio over 20, was fabricated. By using a high-aspect-ratio open-top microchannel plate, high fluorescent electrophoresis was performed.
引用
收藏
页码:4102 / 4106
页数:5
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