Imprint lithography with 25-nanometer resolution

被引:2164
作者
Chou, SY
Krauss, PR
Renstrom, PJ
机构
[1] NanoStructure Laboratory, Department of Electrical Engineering, University of Minnesota, Minneapolis
关键词
D O I
10.1126/science.272.5258.85
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
A high-throughput lithographic method with 25-nanomotor resolution and smooth vertical sidewalls is proposed and demonstrated. The technique uses compression molding to create a thickness contrast pattern in a thin resist film carried on a substrate, followed by anisotropic etching to transfer the pattern through the entire resist thickness. Metal patterns with a feature size of 25 nanometers and a period of 70 nanometers were fabricated with the use of resist templates created by imprint lithography in combination with a lift-off process. With further development, imprint lithography should allow fabrication of sub-10-nanometer structures and may become a commercially viable technique for manufacturing integrated circuits and other nanodevices.
引用
收藏
页码:85 / 87
页数:3
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