Synthesis of hexagonal boron nitride thin films by a plasma assisted chemical vapor deposition method

被引：0
|
作者：
Thévenin, P [1 ]
Soltani, A [1 ]
Bath, A [1 ]
机构：
[1] Univ Metz, MOPS CLOES Supelec, F-57078 Metz, France
来源：
JOURNAL DE PHYSIQUE IV | 2001年 / 11卷 / PR3期
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D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Thin films of boron nitride (BN) have been deposited at low temperature by microwave plasma enhanced chemical vapour deposition (PECVD), using borane dimethylamine as boron precursor. Chemically stable and smooth films of hexagonal boron nitride (h-BN) have been synthesised. Infrared transmittance spectroscopy is used for the phase identification, and also for the determination of the orientation of the c-axis in the samples. The influence of the deposition conditions on the film's morphology have been studied, by varying independently the plasma power, the pressure and the precursor flux.
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页码：803 / 810
页数：8
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