High-k gate stack on germanium substrate with fluorine incorporation

被引：69

作者：

Xie, Ruilong ^{[1
]}

Yu, Mingbin ^{[2
]}

Lai, Mei Ying ^{[3
]}

Chan, Lap ^{[4
]}

Zhu, Chunxiang ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Silicon Nano Device Lab, Singapore 119260, Singapore

[2] Inst Microelect, Singapore 117685, Singapore

[3] Inst Mat Res & Engn, Singapore 117602, Singapore

[4] Chartered Semicond Mfg Ltd, Singapore 738406, Singapore

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 16期

关键词：

D O I：

10.1063/1.2913048

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, a postgate CF(4)-plasma treatment is proposed and demonstrated on germanium (Ge) metal-oxide-semiconductor capacitors and the effects of fluorine (F) incorporation have been studied on both high-k/Ge gate stacks without any surface passivation and with Si surface passivation. Our results show that F is effectively introduced into the gate stack by CF(4) treatment and segregates near high-k/Ge interface. Electrical characteristics such as frequency dispersion, interface state density (D(it)), and gate leakage are improved after F incorporation. Interface quality of high-k/Ge gate stack is further improved by combining Si surface passivation and postgate CF(4) treatment, with its D(it) as low as 4.85x10(11) cm(-2) eV(-1). (C) 2008 American Institute of Physics.

引用

页数：3

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