High-Output-Power Ultraviolet Light Source from Quasi-2D GaN Quantum Structure

被引:78
作者
Rong, Xin [1 ]
Wang, Xinqiang [1 ,2 ]
Ivanov, Sergey V. [3 ]
Jiang, Xinhe [1 ]
Chen, Guang [1 ]
Wang, Ping [1 ]
Wang, Weiying [1 ]
He, Chenguang [1 ]
Wang, Tao [1 ]
Schulz, Tobias [4 ]
Albrecht, Martin [4 ]
Jmerik, Valentin N. [3 ]
Toropov, Alexey A. [3 ]
Ratnikov, Viacheslav V. [3 ]
Kozlovsky, Vladimir I. [5 ,6 ]
Martovitsky, Victor P. [5 ]
Jin, Peng [7 ,8 ]
Xu, Fujun [1 ]
Yang, Xuelin [1 ]
Qin, Zhixin [1 ]
Ge, Weikun [1 ]
Shi, Junjie [1 ]
Shen, Bo [1 ,2 ]
机构
[1] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China
[2] Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China
[3] Ioffe Inst, Polytekhn Skaya 26, St Petersburg 194021, Russia
[4] Leibniz Inst Crystal Growth, D-12489 Berlin, Germany
[5] Russian Acad Sci, Lebedev Phys Inst, Leninsky Pr 53, Moscow 119991, Russia
[6] Natl Res Nucl Univ MEPhI, Kashirskoye Shosse 31, Moscow 115409, Russia
[7] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
[8] Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China
基金
中国国家自然科学基金; 俄罗斯科学基金会;
关键词
EMITTING-DIODES; ELECTRON-BEAM; EMISSION; WELLS; SEMICONDUCTORS; REALIZATION; EFFICIENCY; BLUE;
D O I
10.1002/adma.201600990
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Quasi-2D GaN layers inserted in an AlGaN matrix are proposed as a novel active region to develop a high-output-power UV light source. Such a structure is successfully achieved by precise control in molecular beam epitaxy and shows an amazing output power of approximate to 160 mW at 285 nm with a pulsed electron-beam excitation. This device is promising and competitive in non-line-of-sight communications or the sterilization field.
引用
收藏
页码:7978 / 7983
页数:6
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