Tuning the bandgap of Cd1-xZnxS (x=0∼1) buffer layer and CIGS absorber layer for obtaining high efficiency

被引：19

作者：

Hossain, T. ^{[1
]}

Sobayel, M. K. ^{[2
,3
]}

Munna, F. T. ^{[3
]}

Islam, S. ^{[4
]}

Alkhammash, H., I ^{[5
]}

Althubeiti, Khaled ^{[6
]}

Alam, S. M. Jahangir ^{[7
]}

Techato, K. ^{[2
,8
]}

Akhtaruzzaman, Md ^{[3
,9
]}

Rashid, M. J. ^{[10
,11
]}

机构：

[1] Univ Asia Pacific, Dept Elect & Elect Engn, Dhaka 1205, Bangladesh

[2] Prince Songkla Univ, Fac Environm Management, Environm Assessment & Technol Hazardous Waste Man, Hat Yai 90110, Thailand

[3] Natl Univ Malaysia, Solar Energy Res Inst, Bangi 43600, Malaysia

[4] Bangladesh Univ Professionals, Dept Informat & Commun Technol, Dhaka 1216, Bangladesh

[5] Taif Univ, Coll Engn, Dept Elect Engn, At Taif 21944, Saudi Arabia

[6] Taif Univ, Coll Sci, Dept Chem, POB 11099, At Taif 21944, Saudi Arabia

[7] South China Univ Technol, Sch Mech & Automot Engn, Guangzhou 510640, Peoples R China

[8] Prince Songkla Univ, Dept Sustainable Energy, Fac Environm Management, Hat Yai 90110, Thailand

[9] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058573, Japan

[10] Univ Dhaka, Dept Elect & Elect Engn, Dhaka 1000, Bangladesh

[11] Univ Dhaka, Semicond Technol Res Ctr, Dhaka 1000, Bangladesh

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2022年 / 161卷

关键词：

Bandgap tuning; Buffer layer; CdZnS; CIGS solar cell; SCAPS; FILM SOLAR-CELLS; THIN-FILM; TEMPERATURE-DEPENDENCE; ZNO; ENHANCEMENT; PERFORMANCE; OFFSET; GAP; RECOMBINATION; INTERFACE;

D O I：

10.1016/j.spmi.2021.107100

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

This numerical study deals with the CIGS solar cell considering Cd1-xZnxS buffer layer. The composition 'x' of the buffer layer is determined and its impact on the solar cell performance parameters is studied. The influence of the buffer layer thickness on quantum efficiency is also discussed. The tuned bandgap and optimized thickness of the Cd1-xZnxS buffer layer are then utilized to obtain the suitable bandgap of the CIGS absorber layer. The maximum power con-version zone is revealed in terms of the CIGS bandgap and the impact of this bandgap on spectral response as well as performance parameters are discussed. The Cd0.6Zn0.4S/CIGS interface is studied by varying the defect density from 10(10) cm(-3) to 10(16) cm(-3). The cell performances are also analyzed for the temperature ranging from 260 K to 350 K.

引用

页数：9

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