Low-Power and Highly Reliable Multilevel Operation in ZrO2 1T1R RRAM

被引：90
作者：
Wu, Ming-Chi [1 ,2 ]
Lin, Yi-Wei [1 ,2 ]
Jang, Wen-Yueh [3 ]
Lin, Chen-Hsi [3 ]
Tseng, Tseung-Yuen [1 ,2 ]
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan
[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan
[3] Winbond Elect Corp, Hsinchu 300, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 08期
关键词：
Low power; multilevel; nonvolatile memory; resistive switching; resistive switching access memory (RRAM); ZrO2;
D O I：
10.1109/LED.2011.2157454
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The Ti/ZrO2/Pt resistive memory devices with one transistor and one resistor (1T1R) architecture are successfully fabricated in this letter. The tested devices show low operation current (20 mu A), low switching voltage (set/reset, 0.8/-1 V), and reliable data retention for low-resistance state (LRS) with a 20-mu A set current at 80 degrees C (over ten years) via an excellent current limiter, namely, a metal-oxide-semiconductor field-effect transistor (MOSFET). In addition, multilevel storage characteristics are also demonstrated by modulating the amplitude of the MOSFET gate voltage. The various LRS levels obtained are possibly attributed to the formation of different numbers and sizes of conducting filaments consisting of oxygen vacancies caused by an external electric field. Moreover, reproducible resistive switching characteristics up to 2000 switching cycles are achieved in the same device. Our 1T1R ZrO2-based resistive switching access memory with low-power and highly reliable multilevel operation has high potential for practical applications.
引用
收藏
页码：1026 / 1028
页数：3
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