Plasma wave electronics: Novel terahertz devices using two dimensional electron fluid

被引：346

作者：

Dyakonov, MI ^{[1
]}

Shur, MS ^{[1
]}

机构：

[1] UNIV VIRGINIA,DEPT ELECT ENGN,CHARLOTTESVILLE,VA 22903

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1996年 / 43卷 / 10期

关键词：

D O I：

10.1109/16.536809

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We discuss how the propagation of plasma waves in a High Electron Mobility Transistor (HEMT) can be used to implement a new generation of terahertz devices, including sources, resonant detectors, broad band detectors, and frequency multipliers. Our estimates show that these devices should outperform conventional terahertz devices, which use deep submicron Schottky diodes.

引用

页码：1640 / 1645

页数：6

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