Ultrafast gain and index in semiconductor optical amplifier: Theory and experiment

被引:0
作者
Dorren, HJS [1 ]
Yang, X [1 ]
Lenstra, D [1 ]
de Waardt, H [1 ]
Khoe, GD [1 ]
Simoyama, T [1 ]
Ishikawa, H [1 ]
Kawashima, H [1 ]
Hasama, T [1 ]
机构
[1] COBRA Res Inst, NL-5600 MB Eindhoven, Netherlands
来源
PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XI | 2003年 / 4986卷
关键词
D O I
10.1117/12.482319
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We explain how a semiconductor optical amplifier in a Sagnac-interferometric arrangement can be used for switching of 200 A optical pulses. The switching principles are based on gain and index saturation dynamics on a sub-picosecond timescale. We present a model that accounts for bi-directional propagation of ultrashort optical pulses through the amplifier as well as free-carrier absorption and two-photon absorption. We have also carried out pump and probe experiments to measure the ultrafast refractive index dynamics of a multi-quantum well InGaAsP-InGaAs semiconductor optical amplifier that is operated in the gain regime. The pump and probe pulses are cross-linearly polarized. We observe a phase shift of 200 degrees if the amplifier is pumped with 120 mA of current, but find that the phase shift vanishes if the injection current is increased to 160 mA. Our results indicate a contribution of two-photon absorption to the nonlinear phase shift that opposes the phase shift introduced by the gain. Finally, we observe that the phase shift comes up and disappears within a picosecond.
引用
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页码:521 / 528
页数:8
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