Plasma enhanced chemical vapor deposition of silicon under relatively high pressure conditions

被引：4

作者：

Amanatides, E ^{[1
]}

Lykas, B ^{[1
]}

Mataras, D ^{[1
]}

机构：

[1] Univ Patras, Dept Chem Engn, Plasma Technol Lab, GR-26504 Patras, Greece

来源：

IEEE TRANSACTIONS ON PLASMA SCIENCE | 2005年 / 33卷 / 02期

关键词：

microcrystalline silicon; plasma enhanced chemical vapor deposition; radio frequency discharges; self-consistent modeling; silane; solar cells;

D O I：

10.1109/TPS.2005.845308

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

A two-dimensional self-consistent model of highly-diluted SiH4 in H-2 discharges used for the deposition of microcrystalline silicon thin films is presented. The promising high-pressure regime (1-10 torr), that has been shown experimentally to lead at high growth rates and high crystalline volume fraction, is examined. The main effects of the pressure increase on the power dissipation, the electron density, and the species distribution in the discharge are presented and discussed.

引用

页码：372 / 373

页数：2

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