Structural phase control of CdSe thin films by metalorganic chemical vapor deposition

被引：31
作者：
Ju, Z. G.
Lu, Y. M.
Zhang, J. Y.
Wu, X. J.
Liu, K. W.
Zhao, D. X.
Zhang, Z. Z.
Li, B. H.
Yao, B.
Shen, D. Z.
机构：
[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Key Lab Excited State Proc, Changchun 130033, Peoples R China
[2] Chinese Acad Sci, Grad Sch, Beijing 100864, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2007年 / 307卷 / 01期
关键词：
phase transition; photoluminescence; X-ray diffraction; metalorganic chemical vapor deposition; CdSe;
D O I：
10.1016/j.jcrysgro.2007.06.006
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Photoluminescence of CdSe thin films under different growth conditions was studied in this paper, and typical double emission peaks were observed at room temperature. Temperature and excitation intensity-dependent photoluminescence studies in combination with X-ray diffraction measurements revealed that the two emission peaks originate from cubic- and hexagonal-phased CdSe, respectively, which indicates that the crystalline phases of CdSe can be controlled by changing the growth conditions in metalorganic chemical vapor deposition process. (C) 2007 Elsevier B.V. All rights reserved.
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页码：26 / 29
页数：4
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