Pyrolysis of tertiarybutylamine alone and with trimethylgallium for GaN growth

New nitrogen precursors that pyrolyze at low temperatures are desired to replace NH3, for the organometallic vapor phase epitaxial growth of GaN and, especially, GaInN. Tertiarybutylamine (TBAm) is a candidate having a high vapor pressure that is relatively safe compared with other potential N sources. In order to test the suitability of TBAm for the growth of GaN, the pyrolysis was studied in He and H-2 ambients. The results of co-pyrolysis studies of TBAm plus trimethylgallium are also reported. The pyrolysis reactions are relatively complex. In a hydrogen ambient, the pyrolysis of TBAm alone proceeds mainly via production of t-butyl and NH2, radicals. Co-pyrolysis studies show that an adduct is formed at low temperatures, with elimination of CH4. At higher temperatures, the adduct dissociates and co-pyrolysis proceeds mainly as for the individual precursors. TMGa pyrolysis results in the formation of Ga droplets. (C) 1998 Elsevier Science B.V. All rights reserved.